METHOD FOR MANUFACTURING FIELD-EFFECT TRANSISTOR WITH PERIODICALLY DOPED CHANNEL Russian patent published in 2002 - IPC

FIELD: manufacture of metal-oxide-semiconductor field-effect transistors. SUBSTANCE: method involves selection of wavelength of periodic wavy nanostructure to be shorter by N²/2 times than that of transistor channel prior to forming transistor gate so as to increase transconductance of n-channel silicon field-effect transistor by N times and operating frequency, by 2N times. Wavy nanostructure is formed in vicinity of transistor channel by bombarding silicon surface with nitrogen ion flux, structure period being set by ion energy and angle of bombardment. Nitrogen ion flux is directed along transistor channel. Nanostructure may be formed both on single-crystalline silicon surface and on amorphous silicon layer surface. Nanostructure is modified to enhance its amplitude and used as mask for implanting ions and for shaping periodically doped regions in vicinity of transistor channel. Nanostructure is removed and finally transistor is formed using known processes. EFFECT: provision for transistor manufacture using nanostructure self-forming process dispensing with lithography. 7 cl, 27 dwg