PLANT TO FORM PATTERNS ON SURFACE OF PLATE Russian patent published in 2002 - IPC

Abstract RU 2180885 C1

FIELD: formation of patterns on surface of plates. SUBSTANCE: plant to form patterns on surface of plate has former of matrix of ion beams capable of formation of belt ion beams falling along oblique path on surface of plate in space free of electrostatic fields. EFFECT: expanded functional capabilities. 2 cl, 3 dwg

Similar patents RU2180885C1

Title	Year	Author	Number
PLANT FOR FORMING PICTURE ON PLATE SURFACE	2001	Smirnov V.K. Kibalov D.S.	RU2181085C1
METHOD FOR FORMING PICTURE ON PLATE SURFACE	2001	Smirnov V.K. Kibalov D.S.	RU2181086C1
METHOD FOR SHAPING NANOTOPOGRAPHY ON FILM SURFACE	2002	Smirnov V.K. Kibalov D.S.	RU2204179C1
UNIT FOR ION-BEAM PRODUCTION OF NANOSTRUCTURES ON THE SURFACE OF SEMICONDUCTOR PLATES	2000	Smirnov V.K. Kibalov D.S.	RU2164718C1
METHOD FOR MANUFACTURING FIELD-EFFECT TRANSISTOR WITH PERIODICALLY DOPED CHANNEL	2001	Smirnov V.K. Kibalov D.S. Gergel' V.A.	RU2191444C1
METHOD OF PREPARING DIAMOND-LIKE FILMS FROM HYDROCARBON COMPOUNDS	2000	Samojlovich M.I. Samojlovich S.M.	RU2171859C1
METHOD FOR FORMING ORDERLY UNDULATING NANOSTRUCTURES (VARIANTS)	2003	Smirnov V.K. Kibalov D.S.	RU2240280C1
METHOD OF PREPARING SYNTHETIC MATERIAL WITH NOBLE OPAL STRUCTURE	2000	Samojlovich M.I. Samojlovich S.M.	RU2162456C1
ELECTRON CYCLOTRON RESONANCE -PLASMA SOURCE TO PROCESS SEMICONDUCTOR STRUCTURES, METHOD TO PROCESS SEMICONDUCTOR STRUCTURES, PROCESS OF MANUFACTURE OF SEMICONDUCTOR DEVICES AND INTEGRATED CIRCUITS ( VARIANTS ), SEMICONDUCTOR DEVICE OR INTEGRATED CIRCUIT ( VARIANTS )	2003	Shapoval S.Ju. Tulin V.A. Zemljakov V.E. Chetverov Ju.S. Gurtovoj V.L.	RU2216818C1
MASS-SPECTROMETER ANALYSER OF GAS LEAK DETECTOR	2013	Kozlov Nikolaj Ivanovich	RU2554104C2

RU 2 180 885 C1

Authors

Smirnov V.K.

Kibalov D.S.

Dates

2002-03-27—Published

2001-06-20—Filed