METHOD OF PREPARING NEGATIVE SELECTIVE ETCHING AGENT FOR RESISTANT LAYERS OF CHALCOGENIDE AsS GLASS Russian patent published in 2001 - IPC

FIELD: optical engineering. SUBSTANCE: three organic reagents are mixed in following ratio, vol%: ethylenediamine, 8-12; acetone, 55-70; and dimethylsulfoxide the balance. Chemical reaction between these reagents results in formation of new compounds with more complex structure, which are characterized by high stability constants. Because interaction proceeds very low, complete formation of selective etching agent with stable characteristics requires aging of freshly-prepared mixture for at least 24 days at ambient temperature. Method can be applied in holography, electronic engineering, and polygraphy. EFFECT: improved selectivity and quality of surface etching. 8 dwg, 3 tbl, 5 ex