FIELD: nanotechnology.
SUBSTANCE: invention relates to micro- and nanotechnology, particularly to use of chitosan polysaccharide and compounds thereof as resists for electron-beam lithography and photolithography for making micro- and nano-electronic and optical components. Invention relates to a method of exposing exposed areas of a film of chitosan, a salt or derivative thereof deposited on a substrate, involving bringing a film of chitosan, its salt or derivative thereof, which is applied on the substrate and subjected to exposure, into contact with a solution containing at least one transition element.
EFFECT: disclosed is use of polysaccharide compound in lithography.
44 cl, 11 dwg, 14 ex
| Title | Year | Author | Number | 
|---|---|---|---|
| METHOD OF PRODUCING NEGATIVE MASK | 0 | 
 | SU1132746A1 | 
| DRY LITHOGRAPHY PROCESS | 1995 | 
 | RU2082257C1 | 
| PROCESS OF PHOTOLITHOGRAPHY | 1996 | 
 | RU2096935C1 | 
| METHOD OF PRODUCING EXPOSED SUBSTRATE | 2004 | 
 | RU2344455C2 | 
| METHOD OF DRY ELECTRON-BEAM LITHOGRAPHY | 2016 | 
 | RU2629135C1 | 
| METHOD OF PHOTOLITHOGRAPHY | 2015 | 
 | RU2586400C1 | 
| METHOD FOR MASK CREATION AT SUBSTRATE SURFACE | 2011 | 
 | RU2450384C1 | 
| METHOD TO DEVELOP MASK ON SUBSTRATE SURFACE | 2011 | 
 | RU2471263C1 | 
| METHOD OF MANUFACTURING SINGLE-ELECTRON MONATOMIC TRANSISTORS WITH A TRANSISTOR OPEN CHANNEL AND A TRANSISTOR MANUFACTURED IN THIS WAY | 2018 | 
 | RU2694155C1 | 
| METHOD OF FORMING A METAL Y-SHAPED GATE OF A SUPER-HIGH-FREQUENCY TRANSISTOR | 2019 | 
 | RU2729510C1 | 
Authors
Dates
2020-12-08—Published
2019-11-15—Filed