METHOD OF DEVICES WITH FLOPPY MICROBRIDGES MANUFACTURE Russian patent published in 2017 - IPC H01L39/24 

FIELD: technological processes.

SUBSTANCE: invention relates to the manufacture of high-sensitivity bolometers, electronic coolers, one-electron transistors containing a floppy microbridge of normal metal and superconducting passages of superconductor-insulator-normal metal (SIN) type, superconductor-insulator-another superconductor (SIS'), and also the Andreev contacts (superconductor-Andreev contact-normal metal) and a structure with Schottky barrier (superconductor-Schottky barrier-semiconductor). The proposed method consists of applying a three-layer thin-film structure without breaking the vacuum; applying of resist, exposure, manifestation; selective chemical etching of the lower electrode of three-layer structure. Before the deposition of a three-layer superconductor-insulator-normal metal (SIN) structure, photolithography is carried out, the topology of the SIN structure is formed by the explosion method, and a single etching in alkaline developer combined with resist with a pattern of windows is carried out. The rupture of upper electrode is formed on the step at the boundary of supply conductors, an essential feature is the need to fulfill the condition that the thickness of the upper normal electrode is smaller and the thickness of the lower aluminium electrode is greater than the thickness of lower film of electrical conductors. Four variants of the method are proposed.

EFFECT: increase in reproducibility, decrease in labour and time of fabrication of structures, increase in the area of tunnel junctions with decrease in thickness of upper electrode and the absorber bridge less than the thickness of lower electrode, removing the restriction on the shape of transitions, eliminating parasitic shadows, eliminating parasitic shunt capacitances and leakage resistance, stages of lithography.

4 cl, 1 dwg