METHOD FOR MANUFACTURE OF GAS AND LIQUID FLOW VELOCITY SENSOR Russian patent published in 2009 - IPC H01L21/18 

FIELD: physics.

SUBSTANCE: in method for manufacture of gas and liquid flow velocity sensor, on planar surface of semiconducting substrate multilayer film structure is arranged, which contains mechanically stressed layers in the following sequence: compressed, stretched and also conducting. Pattern of heat loss anemometer is set lithographically, which includes section separated from substrate for formation of tubular sensitive element under action of mechanical stresses and section of current carriers to ends of tubular sensitive element. Then on remaining part of multilayer film structure through windows are formed down to substrate for further etching of substrate. Low-ohm current carriers are created on sections of current carriers, which are also mechanical supports, or mechanical support is additionally formed for tubular sensitive element. Substrate material is etched under section intended for formation of tubular sensitive element, which transforms it into tubular sensitive element. In conclusion substrate material is removed to form both chip and holders of tubular sensitive element, on which current carriers are located.

EFFECT: increased mechanical strength of finished products and increased accuracy of measurements.

15 cl, 9 dwg