FIELD: semiconductor electronics, nanoelectronics, design of integrated circuits with elements of submicron and nanometric dimensions. SUBSTANCE: it is proposed that active base of well-known bipolar transistor incorporating semiconductor substrate which includes high-alloyed regions of collector and emitter and high-alloyed passive base regions should be made in the form of semiconductor whose conductance is close to inherent conductance of semiconductor. Width of active base should be equal to its thickness. The development of bipolar transistor can be used as n-p-n and p-n-p transistor. EFFECT: high density of output current with low supply voltages. 1 dwg
