METHOD FOR READING DIGITAL INFORMATION IN PROBE MEMORY DEVICE Russian patent published in 2002 - IPC

FIELD: computer engineering; high-capacity probe memories. SUBSTANCE: in the course of reading information out of probe memory device permanent gap is maintained between probe and information medium surface in vertical plane by means of servomechanism. In the process line scanning is made of rectangular environment of current binding element in the form of auxiliary synchronizing element or memory element proper. Then next binding element is identified in mentioned environment. Its relative position on information track and bit values of stored information are determined. After that above-described process is repeated for next mentioned element considered to be current one. EFFECT: enhanced reliability of holding memory probe on information track; simplified design of device and control system. 3 dwg