FILM FUSE Russian patent published in 2001 - IPC

Abstract RU 2166812 C1

FIELD: microelectronics, protection of electron devices of integrated make against overloads in low- voltage, weak-current DC and AC circuits. SUBSTANCE: film fuse is composed of insulating backing that carries film of molten NiFe material and current-conducting contacts made of CrCuCr films. Current-conducting contacts are produced from material having higher conductance than film molten material and molten material is made of permalloy film. EFFECT: improved operational characteristics of film fuse, simplified manufacturing technology. 1 cl, 1 dwg

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RU 2 166 812 C1

Authors

Solodkij A.M.

Shkurat N.P.

Orel V.A.

Chervonenko V.D.

Lozovoj A.V.

Tsyrul'Nikov S.A.

Dates

2001-05-10Published

1999-11-02Filed