METHOD FOR FORMING A MAGNETORESISTIVE STRUCTURE WITH SHUTTING STRIPS Russian patent published in 2023 - IPC G01R33/02 B82B3/00 H01L21/82 

FIELD: magnetoresistive structures.

SUBSTANCE: method for manufacturing thin-film magnetoresistive structures with shunt strips used for manufacturing magnetoresistive sensors. The method consists in that through windows are formed in the dielectric layer corresponding to the shape and size of the shunt strips, a conductive seed layer is applied, and then the conductor material is deposited by electrochemical deposition, which is copper from an electrolyte based on an aqueous solution of copper glycinate complex with a concentration of 0.05 M up to 0.1 M, buffered with a solution of citric acid to a pH range of 2.85 to 3.15 at a current density j of 2.0 mA/cm² to 3.0 mA/cm² and a cathode overvoltage AU of 0.22 V up to 0.30 V.

EFFECT: increased ratio of the conductivities of the magnetoresistive material and the shunt strips, maintaining the geometric shape and size of the strips during the process of their formation, improved manufacturability of the manufacture of magnetoresistors, as well as increased sensitivity of the magnetoresistive sensor and reduced level of its noises.

1 cl, 4 dwg