FILM FIELD TRANSISTOR WITH METAL CHANNEL Russian patent published in 2018 - IPC H01L29/73 

FIELD: microelectronics.

SUBSTANCE: invention relates to microelectronics and can be used in the design and manufacture of devices based on transistors with a metal channel. Film field-effect transistor with a metal channel that contains source and drain electrodes formed on the insulating substrate, between which is a gate electrode covered by a gate insulator, and on the gate isolator and on the source and drain electrodes, forming with them ohmic contacts, there is a layer of a metal channel in which the resistivity ρ metal channel is 0.1–10 Ω⋅m, the thickness L of the metal channel is selected in a thickness range of 30–150 nm according to a certain condition. Metals from which the gate electrode and the metal channel are formed are selected to provide a contact potential difference between the gate electrode and the metal channel, and a space charge is located in the metal channel for controlling the channel current, which is induced by the voltage of the contact potential difference.

EFFECT: such a film field effect transistor with a metal channel allows to provide a technical result consisting in increasing the speed, output power and expanding the field of application of the transistor.

3 cl, 4 dwg