FIELD: computer engineering.
SUBSTANCE: invention relates to the field of spintronics and computer technology and is intended for use in random access memory devices. Device for recording information for magnetoresistive RAM includes a magnetic layer with magnetization in its plane, which is made in the form of a parallelepiped and connected to a nonmagnetic layer made in the form of a parallelepiped, whose width is comparable with the width of the magnetic layer, and its length is 2-3 times greater than the length of the magnetic layer, and the insulating substrate on which the nonmagnetic layer is located, between the magnetic layer and the nonmagnetic layer there is an ultrathin layer of platinum 0.2–0.5 nm thick, comparable in shape and size to the magnetic layer, the nonmagnetic layer is made of two layers, one of which is made of graphene and is located in contact with an ultrathin layer of platinum, and the second is made of a monolayer of gold and is located between a layer made of graphene and an insulating substrate.
EFFECT: technical result is to increase the speed of the device.
1 cl, 4 dwg
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Authors
Dates
2019-01-17—Published
2017-11-01—Filed