METHOD OF MAKING MAGNETORESISTIVE SENSOR Russian patent published in 2012 - IPC H01L43/12 

FIELD: physics.

SUBSTANCE: magnetoresistive strips of a Wheatstone bridge are formed through vacuum deposition of a Cr-FeNi (FeNiCo)-Ta-FeNi (FeNiCo) magnetoresistive structure, followed by pattern formation via photolithographic etching. The insulating layers deposited on the formed Wheatstone and the conducting layer, from which an inductance coil is formed, are in form of polyimide varnish whose imidation is carried out by heating in a vacuum while applying a magnetic field directed in the plane of the substrate along the easy magnetic axis of the magnetoresistive strips.

EFFECT: high operational reliability of the sensor, high yield ratio, possibility of obtaining sensors with improved characteristics on substrates made from silicon, ceramic or glass.

3 dwg