SEMICONDUCTOR DEVICE AND ITS MANUFACTURING PROCESS Russian patent published in 2001 - IPC

FIELD: semiconductor engineering. SUBSTANCE: semiconductor device 4 has semiconductor integrated circuit 40, insulating ribbon layer 5, and printed-circuit board 6. Semiconductor integrated circuit 40 has contact-pad wiring surface 43 that carries set of contact pads 41. Insulating ribbon layer 6 has first and second opposing adhesive surfaces 50, 51. First adhesive surface 50 is stuck to contact-pad wiring surface 42 on semiconductor integrated circuit 40. Insulating ribbon layer 5 is provided with holes at points of location of contact pads 41 meant to open the latter. Each hole is bounded by wall. The latter and the respective contact pad 41 form space to receive contact. Conducting contacts are placed in respective spaces. Printed-circuit board 6 has surface 60 bearing printed-wiring pattern stuck to second adhesive surface 51 on insulating ribbon layer 5. Surface 60 bearing printed-wiring pattern is made in the form of separate printed elements connected to conducting contacts so as to close electric circuit through contact pads 41. Device manufacturing process is given in description of invention. EFFECT: improved quality of device. 11 cl, 8 dwg