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Application

99104692/12, 1999-03-10

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Start date

1999-03-10

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Actual filing date

1999-03-10

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Published

2001-09-10

(72)

Inventor

Kamarzin A.A.Lavrent'Ev V.I.Podojnitsin S.V.Bychkov S.I.Mukhin V.V.Muratov E.P.Rozhkov V.V.Snopkov Ju.V.

(73)

Holder

Otkrytoe Aktsionernoe Obshchestvo Zavod Khimkontsentratov"

METHOD FOR PRODUCTION OF MONOSILANE FROM SILICON TETRACHLORIDE Russian patent published in 2001 - IPC

Abstract RU 2173297 C2

FIELD: inorganic compounds technologies. SUBSTANCE: invention, in particular, relates to monosilane appropriate for manufacturing especially pure semiconductor silicon. Method is characterized by that silicon tetrachloride is interacted with lithium hydride whose surface is subjected to activation with vibrating conveyer. Silicon tetrachloride gas flow is fed in counter-current mode into moving conveyer charged by lithium hydride and process is carried out at 290-300 C. EFFECT: increased yield of monosilane at lower temperature and reduced reaction time, enabled wasteless technology. 2 ex

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RU 2 173 297 C2

Authors

Kamarzin A.A.

Lavrent'Ev V.I.

Podojnitsin S.V.

Bychkov S.I.

Mukhin V.V.

Muratov E.P.

Rozhkov V.V.

Snopkov Ju.V.

Dates

2001-09-10—Published

1999-03-10—Filed