FIELD: chemistry.
SUBSTANCE: invention relates to production of silicon-containing materials which are used in production of semiconductor silicon. The method involves catalytic hydrogenation of silicon tetrachloride with subsequent separation of reaction products, wherein the catalyst used is chlorides of transition metals or mixtures thereof; hydrogenation is carried out at temperature not lower than 200°C, preferably at 300-350°C, and the formed reaction products are cooled to temperature not higher than 100°C. During the process, formed chlorosilanes are removed from the mixture of products, and unreacted silicon tetrachloride and hydrogen are returned into the process cycle, which enables to increase conversion of silicon tetrachloride to 100%.
EFFECT: method is energy-saving owing to hydrogenation of silicon tetrachloride at low temperature with sufficiently high conversion of silicon tetrachloride of about 75-90%.
3 cl, 9 ex
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Authors
Dates
2013-01-20—Published
2011-09-14—Filed