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2 194 009

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Application

2001109651/12, 2001-04-10

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Start date

2001-04-10

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Actual filing date

2001-04-10

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Published

2002-12-10

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Inventor

Lavrent'Ev V.I.Zelenin Ju.M.Lavrenjuk P.I.Muratov E.P.Mukhin V.V.Rozhkov V.V.Sokolov V.V.Stonoga Ju.A.Trushnikova L.N.

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Holder

Otkrytoe Aktsionernoe Obshchestvo Zavod Khimkontsentratov"

METHOD OF SYNTHESIS OF SILANE Russian patent published in 2002 - IPC

Abstract RU 2194009 C1

FIELD: inorganic chemistry, chemical technology. SUBSTANCE: invention relates to technology of synthesis of semiconductive silicon and technology of formation of different silicon-containing layers in microelectronics. Silane is synthesized by interaction of quartzite with hydrogen-containing compound at heating. Lithium hydride is used as hydrogen-containing compound. Reaction is performed in atmosphere of inert gas or hydrogen at temperature 600-800 C. After chilling melt is treated with protonic acids aqueous solution. Ratio Li : Si in the parent charge is taken in atomic ratio = 8:1. EFFECT: increased yield of silane, decreased content of impurities, decreased cost. 2 cl, 2 ex

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RU 2 194 009 C1

Authors

Lavrent'Ev V.I.

Zelenin Ju.M.

Lavrenjuk P.I.

Muratov E.P.

Mukhin V.V.

Rozhkov V.V.

Sokolov V.V.

Stonoga Ju.A.

Trushnikova L.N.

Dates

2002-12-10—Published

2001-04-10—Filed