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2001109652/12, 2001-04-10

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Start date

2001-04-10

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Actual filing date

2001-04-10

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Published

2002-12-10

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Inventor

Lavrent'Ev V.I.Zelenin Ju.M.Lavrenjuk P.I.Muratov E.P.Mukhin V.V.Rozhkov V.V.Sokolov V.V.Stonoga Ju.A.Trushnikova L.N.

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Holder

Otkrytoe Aktsionernoe Obshchestvo Zavod Khimkontsentratov"

METHOD OF SYNTHESIS OF SILANE Russian patent published in 2002 - IPC

Abstract RU 2194010 C1

FIELD: inorganic chemistry, chemical technology. SUBSTANCE: invention relates to technology of preparing semiconductive silicon and to technology of formation of different silicon-containing layers in microelectronics. Process is performed by interaction of silicide with mineral acid. Lithium silicide is used as silicide and interaction is carried out at the room temperature using acetic and hydrochloric acids. EFFECT: increased yield of silane, decreased cost of product. 2 ex

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RU 2 194 010 C1

Authors

Lavrent'Ev V.I.

Zelenin Ju.M.

Lavrenjuk P.I.

Muratov E.P.

Mukhin V.V.

Rozhkov V.V.

Sokolov V.V.

Stonoga Ju.A.

Trushnikova L.N.

Dates

2002-12-10—Published

2001-04-10—Filed

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