SILANE PRODUCTION PROCESS Russian patent published in 2006 - IPC C01B33/04 

FIELD: organoelemental synthesis.

SUBSTANCE: invention relates to technology of producing pure semiconductor silane useful in power electronics as well as to silicon plates for manufacturing superlarge integral schemes and to form various layers and film coatings in microelectonics area. For that purpose, lithium silicide is placed into drum-type reactor, which is then evacuated and heated, after which distilled water vapors is injected into interior of reactor at 90-95^°C. Three hours later, a few drops of distilled water re added to further recover silicon in the form of silane. Overall yield of silane is 50-53%.

EFFECT: reduced purity of product and increased blasting safety of the process.