FIELD: electricity.
SUBSTANCE: invention relates to power semiconductor devices and bipolar integrated circuits. Integrated circuit power bipolar-field-effect transistor is realised using an original functionally integrated structure of the integrated circuit, in which functionally combined heavily doped bipolar transistor base region and source and drain of field transistor, field-effect transistor gate and a bipolar transistor collector electrode region.
EFFECT: invention provides higher efficiency, reduced power losses at switching, simplified production.
4 cl, 3 dwg
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