CERIUM OXIDE ABRASIVE AND SUBSTRATE POLISHING TECHNIQUE Russian patent published in 2002 - IPC

Abstract RU 2178599 C2

FIELD: microelectronics. SUBSTANCE: abrasive has suspension including cerium oxide particles; average diameter of primary particles is 30 to 250 nm and that of particles in suspension, 150 to 600 nm. Mentioned cerium oxide particles are dispersed in medium; their specific surface area is 7 to 45 sq. m/g; value of structural parameter Y being isotropic microdeformation determined during powder X-ray structure analysis using Ritwelt technique is between 0.01 and 0.70 for said cerium oxide particles. EFFECT: provision for polishing silicon dioxide films at high speed without causing scores on them. 15 cl, 4 ex

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RU 2 178 599 C2

Authors

Joshida Masato

Ashidzava Taranosuke

Terasaki Khiroki

Kurata Jasushi

Matsudzava Dzjun

Tanno Kijokhito

Ootuki Juuto

Dates

2002-01-20Published

1997-09-30Filed