SEMICONDUCTOR MEMORY DEVICE Russian patent published in 2005 - IPC

Abstract RU 2249262 C2

FIELD: semiconductor memory devices.

SUBSTANCE: device has a lot of memory elements, each of which contains input and output areas, isolating film, channel area, shutter electrode, area for storing electric charges, device also contains large number of periphery circuits, containing reading amplifier, register for storing recorded data of memory elements, register, which preserves the flag, indicating end of record during its check, and circuit, which after recording operation compares value, read from memory cell, to value, fixed by flag at the end of record, and overwrites value indicated by the flag.

EFFECT: higher reliability of operation.

5 cl, 71 dwg

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RU 2 249 262 C2

Authors

Sano Toshiaki

Ishii Tomojuki

Jano Katsuo

Mine Toshijuki

Dates

2005-03-27Published

1999-01-27Filed