METHOD OF POLISHING SEMICONDUCTOR MATERIALS Russian patent published in 2012 - IPC H01L21/302 B82B3/00 

FIELD: chemistry.

SUBSTANCE: in the method for chemical-mechanical polishing of semiconductor materials, involving subjecting the treated surface to the action of a mechanical load and a polishing composition containing an aqueous suspension of abrasive particles and an iodine-containing component, according to the invention, the iodine-containing component is iodine in form of its solution in ethyl alcohol, concentration of abrasive particles in the aqueous suspension ranges from 15 to 20 wt %, concentration of iodine in the alcohol solution ranges from 0.1 to 1 wt %, wherein content of the alcohol solution of iodine in the composition ranges from 1 to 15 wt %. The abrasive particles in the composition primarily contain zeolite NaX particles or silicon dioxide particles obtained by burning silicon tetrachloride in low-temperature oxygen and hydrogen plasma, wherein the mean particle size of the abrasive ranges from 10 to 1000 nm.

EFFECT: high quality of the polished surface.

2 cl