FIELD: chemistry.
SUBSTANCE: invention relates to the composition for chemical-mechanical polishing (CMP) and its use in polishing substrates of a semiconductor industry. The composition comprises cerium oxide particles, a protein containing cysteine as an amino acid unit, and an aqueous medium.
EFFECT: composition exhibits improved polishing characteristics.
12 cl, 1 tbl
Authors
Dates
2017-09-28—Published
2013-01-25—Filed