FIELD: measurement technology. SUBSTANCE: invention refers to technology of measurement of thermal parameters of semiconductor devices, specifically, diodes and can be employed to test quality of diodes and to evaluate their temperature margins. Process determining thermal resistance of junction-package of semiconductor diodes consists in supply of heating pulses of current of constant amplitude Im to tested diode, in passing of constant initial current in intervals between them, in determination of value of heating power Pm and in measurement of change of temperature-sensitive parameter of forward voltage of diode with flow of constant initial current. In this case heating pulses of current are so supplied to tested diode that value reverse to relative duration of heating pulses of current Q-1 = τu• fpr,, where τu is duration of heating pulses of current, fpr is frequency of their repetition increases in agreement with linear law with constant slope SQ. Rate ϑ of change of forward voltage of diode in process of flow of initial current through it is measured and thermal resistance of junction-package of diode is found by formula 
, where KT is temperature coefficient of forward voltage of diode during flow of constant initial current through it. EFFECT: decreased measurement time, reduced number of hardware items. 2 dwg
