AVALANCHE PHOTODETECTOR (EMBODIMENTS) AND METHOD OF MANUFACTURING (EMBODIMENTS) Russian patent published in 2020 - IPC H01L31/107 H01L31/18 

FIELD: physics.

SUBSTANCE: inventions relate to avalanche photodetectors (APD) - high-speed, high-sensitivity devices widely used in lidars, communication systems, technical vision, robotics, in medicine and biology in environmental monitoring, and so forth. Proposed is an avalanche photodetector manufacturing method involving the following operations: a multiplication layer is formed on the entire surface of the semiconductor substrate; dielectric layer is applied on entire surface of multiplication layer; at least one avalanche amplifier is formed on a portion of the upper surface of the multiplication layer and the dielectric layer, for which a recess is etched in the dielectric layer and the multiplication layer, the side walls of which are coated with a dielectric layer, contact layer of the above avalanche amplifier is formed by filling the recess with heavily doped polycrystalline silicon with a conductivity type opposite to that of the multiplication layer, followed by diffusion from the region of polycrystalline silicon into the multiplication layer, and a photoconverter formed outside the recess; on surface of contact layer and dielectric layer there is applied first electrode from transparent material; on lower surface of semiconductor substrate second electrode is formed. Invention covers also one more method of making APD and APD produced by said methods.

EFFECT: inventions provide high threshold sensitivity and also reduce dark current of the device.

13 cl, 18 dwg