AVALANCHE PHOTODETECTOR (EMBODIMENTS) AND METHOD OF MANUFACTURING THEREOF (EMBODIMENTS) Russian patent published in 2020 - IPC H01L31/107 H01L31/18 

FIELD: physics.

SUBSTANCE: inventions relate to avalanche photodetectors (APD) - high-speed, high-sensitivity devices widely used in lidars, communication systems, technical vision, robotics, in medicine and biology in environmental monitoring, and so forth. Proposed is an avalanche photodetector manufacturing method involving the following operations: a multiplication layer is formed on the entire surface of the semiconductor substrate; on the surface of the multiplication layer, the closed groove is etched to a depth equal to or greater than the thickness of the multiplication layer, but less than the total thickness of the substrate and the multiplication layer, to form a photodetector inside it; filling the closed groove with heavily doped polycrystalline silicon with the same conductivity type as the multiplication layer; on the part of the upper surface of the multiplication layer limited by said closed groove, a contact layer of at least one avalanche amplifier is formed, forming a region of the photoconverter outside said contact layer; first transparent electrode is formed on contact layer; on lower surface of semiconductor substrate second electrode is formed. Invention also discloses two versions of method for making APD and APD made by said methods.

EFFECT: inventions allow improving main characteristic of avalanche photodetector - its threshold sensitivity.

15 cl, 22 dwg