AVALANCHE PHOTODETECTOR (EMBODIMENTS) AND METHOD OF MANUFACTURING THEREOF (EMBODIMENTS) Russian patent published in 2020 - IPC H01L31/107 H01L31/18 

FIELD: physics.

SUBSTANCE: inventions relate to avalanche photodetectors (APD) - high-speed, high-sensitivity devices widely used in lidars, communication systems, technical vision, robotics, in medicine and biology in environmental monitoring, and so forth. Proposed is an avalanche photodetector manufacturing method involving the following operations: on the entire upper surface of the semiconductor substrate, a multiplication layer is formed; on part of upper surface of multiplication layer is formed, at least, one avalanche amplifier, for which along the boundary of this part of the multiplication layer there is etched an annular groove with depth less than the thickness of the multiplication layer, filling it with a dielectric, and inside the area bounded by the groove, a contact layer of the above avalanche amplifier is applied, forming a photoconverter layer outside the area limited by the groove; dielectric layer is applied on photoconverter top surface; first electrode of transparent material is applied on surface of contact and dielectric layers; on lower surface of semiconductor substrate second electrode is formed. Invention covers also one more method of making APD and APD produced by said methods.

EFFECT: inventions provide high threshold sensitivity of APD, reduce dark current of the device and reduce noise of interference of neighboring avalanche amplifiers when implementing a photodetector with a plurality of such amplifiers.

11 cl, 18 dwg