FIELD: internal nondestructive flaw inspection in manufacturing semiconductor and hybrid structures. SUBSTANCE: device has optically coupled radiation source and structure holder made of transparent components and incorporating one or more hidden interfaces between contacting surfaces, detection chamber with photodetecting array adjusted to receive interference pattern on video monitor. Radiation source is, essentially, heat radiating source whose temperature is higher than ambient background temperature; spectral sensitivity band of photodetecting array meets Δλ/λ≤0,1 condition, where Δλ is width of operating spectral range of photodetecting array; λ is typical operating wavelength. Distance between radiation source and structure holder provides for sufficiently homogeneous illumination of structure surface under inspection. Radiation source may be placed both in front of and behind structure holder. EFFECT: enhanced functional capabilities, simplified design and reduced cost of device. 17 cl, 8 dwg
