METHOD OF MANUFACTURING SENSOR FOR SEMICONDUCTIVE GAS TRANSDUCER Russian patent published in 2008 - IPC G01N27/12 

Abstract RU 2319953 C1

FIELD: instrument industry.

SUBSTANCE: method comprises forming contact areas on one side of the dielectric substrate by spraying platinum and heater made of meander on the other side of substrate, spraying film of tin dioxide, depositing a catalyzer, annealing the substrate in air, and applying additional layer of catalyzer made of nano-grains.

EFFECT: enhanced sensitivity.

5 dwg

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Authors

Anisimov Oleg Viktorovich

Davydova Tamara Anatol'Evna

Maksimova Nadezhda Kuz'Minichna

Chernikov Evgenij Viktorovich

Shchegol' Sergej Stepanovich

Dates

2008-03-20Published

2006-08-15Filed