SEMICONDUCTOR SENSOR FOR RECORDING EXPLOSIVE GASEOUS COMPONENTS CONTAINED IN AIR Russian patent published in 2004 - IPC

FIELD: micro-electronic engineering; test equipment for testing natural hydrocarbons in underground workings: mines, underground, municipal sewage systems; check of leakage of industrial and domestic gas.

SUBSTANCE: proposed sensor includes mono-crystal silicon substrate with silicon dioxide layer and temperature pickup made in form of resistive bridge located on said substrate. Applied in succession on silicon dioxide layer are the following layers: mono-crystal silicon layer having porous surface, second silicon dioxide layer, thermo-catalytic layer and insulating layer applied in two non-symmetric arms of bridge and used for protection of catalytic layer against atmosphere. Thermo-catalytic layer in two other arms non-symmetric of resistive bridge is left open for processing of oxidizing reaction of surface combustion of gaseous component of explosive compound with oxygen of air causing release of heat and consequently unbalance of bridge and appearance of electric signal.

EFFECT: enhanced response and sensitivity; avoidance regeneration of gas-sensitive layer, simplification of electronic circuit; operation of sensor in wide temperature range.

4 dwg