MANUFACTURING METHOD OF GAS SENSOR WITH NANOSTRUCTURE, AND GAS SENSOR ON ITS BASIS Russian patent published in 2014 - IPC G01N27/12 B82B3/00 

FIELD: measurement equipment.

SUBSTANCE: invention relates to manufacture of gas sensors intended for detection of different gases. The invention proposes a gas sensor manufacturing method, in which a heterostructure is formed of different materials; a gas-sensitive layer is made in it; after that, it is fixed in the sensor housing, and contact pads are connected to terminals of the housing by means of contact conductors. The gas-sensitive layer is made in the form of a thin tread-like nanostructure (SiO₂)_20%(SnO₂)_80%, where 20% - mass fraction of SiO₂, and 80% - mass fraction of component SnO₂, by application of sol of orthosilicic acid, which contains stannum hydroxide, onto a silicone surface by means of a centrifuge with further annealing. An area with width of 1 mcm and depth of 200 nm is formed on the surface of the substrate surface by a method of local anodic oxidation. Sol is prepared at two stages: at the first stage, Tetraethoxysilane (TEOS) and ethyl alcohol (95%) is mixed in the ratio of 1:1.046 at room temperature, and the mixture is exposed during about 30 minutes, and at the second stage, to the obtained solution there introduced is distilled water in the ratio of 1:0.323; hydrochloric acid (HCl) in the ratio of 1:0.05; stannum chloride dihydrate (SnCl₂·2H₂O) in the ratio of 1:0.399, where TEOS volume is accepted as one, and stirred at least during 60 minutes. The invention also proposes a gas sensor with a nanostructure, which is made as per the proposed method.

EFFECT: increasing gas sensor sensitivity.

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