METHOD FOR FORMING SILICA Russian patent published in 2002 - IPC

Abstract RU 2191848 C2

FIELD: microelectronics, namely processes for making integrated microcircuits. SUBSTANCE: method comprises steps of making silica by forming it at reduced pressure while adding chlorine-containing matter enhancing electrophysical parameters of silica. EFFECT: improved properties of silica. 6 cl

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RU 2 191 848 C2

Authors

Krasnikov G.Ja.

Manzha N.M.

Nechiporenko A.P.

Burzin S.B.

Dates

2002-10-27Published

1999-12-16Filed