METHOD FOR FORMING LAYERS OF POLYCRYSTALLINE SILICON Russian patent published in 2002 - IPC

FIELD: microelectronics, namely processes for making integrated circuits. SUBSTANCE: method comprises steps of loading semiconductor plates into reactor; feeding monosilane at temperature of growing layer of amorphous silicon; depositing layer of amorphous silicon; increasing temperature until that of growing layer of polycrystalline silicon and depositing it until predetermined thickness; supplying inert gas into reactor until achieving atmospheric pressure; discharging plates. Deposition of layer of amorphous silicon is realized at temperature T that is higher or equal to 550 C and that is less or equal to 570 C for (5 -10) min; deposition of polycrystalline silicon is realized at temperature T that is higher or equal to 610 C and less or equal to 640 C. EFFECT: enhanced uniformness of layers of polycrystalline silicon. 3 cl, 1 ex