METHOD FOR MANUFACTURING INTEGRATED CIRCUITS AROUND CMOS TRANSISTORS Russian patent published in 2002 - IPC

Abstract RU 2185686 C2

FIELD: microelectronics. SUBSTANCE: combined process of forming separate and insulating silicon dioxide including thermal cleaning of plate surfaces with trichloroethylene and oxygen, modifying silicon dioxide precipitated from tetraethoxysilane at reduced pressure, followed by thermal annealing in trichloroethylene and oxygen improves and stabilizes electrophysical properties of silicon dioxide. EFFECT: enhanced yield of integrated circuits. 3 dwg

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RU 2 185 686 C2

Authors

Manzha N.M.

Klychnikov M.I.

Kravchenko D.G.

Kechkova E.A.

Dates

2002-07-20Published

2000-03-16Filed