FIELD: microelectronics. SUBSTANCE: combined process of forming separate and insulating silicon dioxide including thermal cleaning of plate surfaces with trichloroethylene and oxygen, modifying silicon dioxide precipitated from tetraethoxysilane at reduced pressure, followed by thermal annealing in trichloroethylene and oxygen improves and stabilizes electrophysical properties of silicon dioxide. EFFECT: enhanced yield of integrated circuits. 3 dwg
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Authors
Dates
2002-07-20—Published
2000-03-16—Filed