PROCESS OF PRODUCING DIAMOND SINGLE CRYSTALS Russian patent published in 2002 - IPC

Abstract RU 2192511 C1

FIELD: production of single crystals of diamond and other superhard materials. SUBSTANCE: process is realized by method of temperature gradient on seed crystal in melt of metal-solvent selected from group including cobalt, nickel, iron, chromium and manganese. Process includes heating within region of diamond stability at initial pressure above 4 GPa and holding with combined temperature variation up to 10% of synthesis initial value and increase of pressure within the range of from 1 to 5% of initial value. Technical result consists in production of large (above 1.5 ct) diamond high-quality single crystals cubooctahedron and octahendron habitus types. EFFECT: higher efficiency. 1 tbl

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RU 2 192 511 C1

Authors

Zhukov V.A.

Konotop A.Ju.

Kostjaev A.V.

Dates

2002-11-10Published

2001-12-05Filed