FIELD: growing of crystals. SUBSTANCE: method involves creating predetermined temperature differential between diamond seed and carbon source, which are separated by mass of metal catalyst-solvent, by supplying high pressure and creating high temperature in reaction zone of carbon source, where metal catalyst-solvent layers are positioned in alternation with seed crystals; heating diamond seed to temperature approximating minimum temperature for given temperature differential and simultaneously heating carbon source to temperature approximating maximum temperature for given temperature interval; conducting the process at constant temperature differential between carbon source and monocrystal grown, which is equal to its initial value. Constant temperature differential is provided by increasing power of auxiliary heat source, which is connected within reaction cell at the side adjacent to carbon source, or/and by decreasing power of heat source, connected within reaction cell at the side adjacent to diamond seed, in the process of monocrystal growing, or by increasing power of auxiliary heat source, connected within reaction cell at the side adjacent to carbon source, and by additional cooling of reaction cell at the side adjacent to seed, or by decreasing power of auxiliary heat source and by decreasing cooling of reaction cell at the side adjacent to carbon source, or by changing electric potential additionally supplied to side surface of tubular heater in the vicinity of section, where carbon source is positioned. EFFECT: increased efficiency and improved quality of crystals grown. 5 cl, 1 dwg, 1 tbl
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Authors
Dates
1996-02-20—Published
1989-04-25—Filed