METHOD FOR SYNTHESIS OF DIAMOND MONOCRYSTALS ON SEED Russian patent published in 1996 - IPC

Abstract SU 1788700 A1

FIELD: growing of crystals. SUBSTANCE: method involves creating predetermined temperature differential between diamond seed and carbon source, which are separated by mass of metal catalyst-solvent, by supplying high pressure and creating high temperature in reaction zone of carbon source, where metal catalyst-solvent layers are positioned in alternation with seed crystals; heating diamond seed to temperature approximating minimum temperature for given temperature differential and simultaneously heating carbon source to temperature approximating maximum temperature for given temperature interval; conducting the process at constant temperature differential between carbon source and monocrystal grown, which is equal to its initial value. Constant temperature differential is provided by increasing power of auxiliary heat source, which is connected within reaction cell at the side adjacent to carbon source, or/and by decreasing power of heat source, connected within reaction cell at the side adjacent to diamond seed, in the process of monocrystal growing, or by increasing power of auxiliary heat source, connected within reaction cell at the side adjacent to carbon source, and by additional cooling of reaction cell at the side adjacent to seed, or by decreasing power of auxiliary heat source and by decreasing cooling of reaction cell at the side adjacent to carbon source, or by changing electric potential additionally supplied to side surface of tubular heater in the vicinity of section, where carbon source is positioned. EFFECT: increased efficiency and improved quality of crystals grown. 5 cl, 1 dwg, 1 tbl

Similar patents SU1788700A1

Title Year Author Number
METHOD OF GROWING DIAMOND MONOCRYSTAL 2005
  • Terent'Ev Sergej Aleksandrovich
  • Blank Vladimir Davydovich
  • Nosukhin Sergej Anatol'Evich
  • Kuznetsov Mikhail Sergeevich
RU2320404C2
METHOD FOR SYNTHESIS OF DIAMOND SINGLE CRYSTALS ON SEED 1988
  • Belousov I.S.
  • Budjak A.A.
  • Ivakhnenko S.A.
  • Chipenko G.V.
SU1570223A1
REACTION CELL OF HIGH-PRESSURE GANG-DIE APPARATUS FOR GROWTH OF ASYMMETRICALLY ZONAL DIAMOND SINGLE CRYSTALS 2000
  • Chepurov A.I.
  • Fedorov I.I.
  • Sonin V.M.
  • Bagrjantsev D.G.
  • Chepurov A.A.
  • Zhimulev E.I.
  • Grigorash Ju.M.
RU2176690C1
REACTION CELL FOR CRYSTAL GROWING ASYMMETRICALLY ZONAL SINGLE CRYSTALS OF DIAMOND 1997
  • Chepurov A.I.
  • Fedorov I.I.
  • Sonin V.M.
  • Bagrjantsev D.G.
  • Chepurov A.A.
  • Zhimulev E.I.
  • Grigorash Ju.M.
RU2128548C1
PROCESS OF PRODUCING DIAMOND SINGLE CRYSTALS 2001
  • Zhukov V.A.
  • Konotop A.Ju.
  • Kostjaev A.V.
RU2192511C1
METHOD FOR OBTAINING DOPED DIAMOND MONOCRYSTAL 2016
  • Blank Vladimir Davydovich
  • Kuznetsov Mikhail Sergeevich
  • Nosukhin Sergej Anatolevich
  • Terentev Sergej Aleksandrovich
  • Tarelkin Sergej Aleksandrovich
  • Bormashov Vitalij Sergeevich
  • Buga Sergej Gennadevich
RU2640788C1
PROCESS FOR PRODUCTION OF SYNTHETIC MONOCRYSTALLINE DIAMOND MATERIAL 2013
  • Borze Ditrikh
  • Gura Ojgen
  • Dodzh Karlton Najdzhel
  • Spits Rejmond Entoni
RU2580743C1
METHOD FOR OBTAINING SUPERHARD MATERIALS 2020
  • Kolyadin Aleksandr Vladimirovich
  • Khikhinashvili Tejmuraz Yurevich
RU2752346C1
REACTION CELL OF HIGH-PRESSURE MULTI-PUNCH APPARATUS FOR GROWING LOW-NITROGEN DIAMOND MONOCRYSTALS 2003
  • Chepurov A.A.
RU2254910C2
REACTION CELL OF HIGH-PRESSURE GANG-PUNCH APPARATUS FOR GROWING ASYMMETRICALLY ZONAL DIAMOND MONOCRYSTALS 1999
  • Chepurov A.I.
  • Fedorov I.I.
  • Sonin V.M.
  • Bagrjantsev D.G.
  • Chepurov A.A.
  • Zhimulev E.I.
  • Grigorash Ju.M.
RU2162734C2

SU 1 788 700 A1

Authors

Belousov I.S.

Budjak A.A.

Ivakhnenko S.A.

Chipenko G.V.

Dates

1996-02-20Published

1989-04-25Filed