METHOD OF GROWING DIAMOND MONOCRYSTAL Russian patent published in 2008 - IPC B01J3/06 C30B29/04 C01B31/06 

Abstract RU 2320404 C2

FIELD: crystal growth.

SUBSTANCE: method comprises separating the inoculation from the source of carbon by a metal-dissolver made of an alloy of ferrous, aluminum, and carbon when a 20-30°C temperature gradient is produced between the carbon source and inoculation. The growth zone is heated up to a temperature higher than the melting temperature of the alloy by 10-20°C, and the melt is allowed to stand at this temperature for 20 hours. The temperature then suddenly increases above the initial temperature by 10-25°C and decreases down to the initial value with a rate of 0.2-3 degree per minute.

EFFECT: improved quality of crystal.

1 tbl, 2 ex

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RU 2 320 404 C2

Authors

Terent'Ev Sergej Aleksandrovich

Blank Vladimir Davydovich

Nosukhin Sergej Anatol'Evich

Kuznetsov Mikhail Sergeevich

Dates

2008-03-27Published

2005-11-28Filed