SILICON-ON-INSULATOR STRUCTURE FOR MANUFACTURING SEMICONDUCTOR DEVICES AND ITS PRODUCTION METHOD Russian patent published in 2002 - IPC

FIELD: microelectronics. SUBSTANCE: microelectronic structure designed for manufacturing microactuators, microphones, field-effect transistors, electret components, and the like includes silicon-containing semiconductor substrate as well as inorganic and organic insulators. Organic insulator is formed from polyamide having rigid chain structure. Substrate and insulators are formed to obtain three-layer planar sandwich composite with layers of inorganic insulator and organic polyamide insulator alternately disposed on substrate. Layer thickness of organic polyamide insulator having rigid chain structure is 1-40 nm. Method for producing microelectronic structure is also given in description of invention. EFFECT: enhanced reliability and electric stability of product obtained; facilitated manufacture. 3 cl, 3 dwg, 2 tbl, 4 ex