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2 165 663

(13)

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IPC

(21) (22)

Application

99114575/28, 1999-07-13

(24)

Start date

1999-07-13

(22)

Actual filing date

1999-07-13

(45)

Published

2001-04-20

(72)

Inventor

Luchinin V.V.Korljakov A.V.Kostromin S.V.Nikitin I.V.

(73)

Holder

Sankt-Peterburgskij Gosudarstvennyj Ehlektrotekhnicheskij UniversitetTsentr Tekhnologij Mikroehlektroniki

INFRARED RADIATION SOURCE Russian patent published in 2001 - IPC

Abstract RU 2165663 C2

FIELD: microelectronics; low-inertia microelectronic infrared radiation sources. SUBSTANCE: device has silicon substrate carrying electroluminescent member made of silicon-containing material and provided with current-conducting contacts; this member is electrically insulated from substrate by means of passivating SiO₂ coating. Electroluminescent member is made of SiC in the form of bridge. Most reasonable location of electroluminescent member is in hole made in substrate. EFFECT: enlarged infrared radiation range. 3 cl, 4 dwg, 1 tbl

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RU 2 165 663 C2

Authors

Luchinin V.V.

Korljakov A.V.

Kostromin S.V.

Nikitin I.V.

Dates

2001-04-20—Published

1999-07-13—Filed