METHOD FOR MICROPROFILING SUBSTRATE MATERIAL Russian patent published in 2001 - IPC

FIELD: manufacture of micromechanical and microelectronic sandwich-structure devices on substrate. SUBSTANCE: method for microprofiling SiC-AlN material includes plasma-chemical etching process with coating mask applied to SiC film areas followed by removal of AlN layer areas to open movable components of target product. All operations are made in quasi-enclosed chamber of reactive ion-plasma etching installation under high-frequency magnetron discharge at specific power of 1.4±4 W/sq. cm; masking material used for the purpose is aluminum; SiC film areas are etched at a pressure of 0.4±0,2 Pa in plasma of gas mixture SF₆/O₂, containing 15±5 volume percent of O₂; AlN layer is removed at a pressure of 0.5±9.1 Pa in plasma of gas mixture C₂Cl₃F₃/O₂ containing 5±2 volume percent of O₂. Ratio of pressure within chamber to specific power of high-frequency discharge should be best controlled by means of servo system using proportion where p is pressure within quasi-enclosed chamber, Pa; w_sp is specific power of magnetron discharge, W/sq. cm. Final operation for producing structure on silicon substrate involves deep local etching of the latter in plasma of SF₆/O₂, gas mixture containing 12±8 volume percent of O₂, at a pressure of 0.6±0.2 Pa. EFFECT: facilitated procedure due to using single processing installation and unified technology. 3 cl, 2 dwg, 3 tbl