FIELD: manufacture of microgyros, microaccelerators, pressure microtransducers from silicon-carrying semiconductor structures. SUBSTANCE: process provides for manufacture of micromechanical instruments from silicon-carrying structure and involves application of film made from monocrystalline silicon-carrying material to substrate and its separation from substrate by dielectric layer which is followed by etching of sections of film to form measurement unit, removal of dielectric layer to release mobile elements of measurement unit and by formation of electric contacts for measurement means. Epitaxially grown semiconductor sandwich structure containing silicon carbide film isolated from substrate by layer of aluminium nitride is used in the capacity of starting material. Isolated testing section which linear dimensions take into consideration floating of semiconductor film of testing section during etching of dielectric layer located under it at moment of assured achievement of specified dimensions by left parts of manufactured article is formed additionally to establish moment of termination of operation of dielectric etching. EFFECT: enhanced mechanical, temperature and radiation stability of micromechanical instruments. 2 cl, 4 dwg, 3 tbl
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Authors
Dates
1999-09-10—Published
1998-03-31—Filed