MICROMECHANICAL GAGE AND ITS MANUFACTURING PROCESS Russian patent published in 2001 - IPC

FIELD: microelectronics. SUBSTANCE: micromechanical gage has resistance strain sensing member formed in semiconductor structure of doped silicon carbide on substrate bearing insulating surface. Silicon carbide used as semiconductor structure is doped so that ratio of active to defective impurity centers were 1 : (2-20); in addition, resistance strain sensing member is formed in semiconductor structure. Method for manufacturing micromechanical gage involves evaporation of semiconductor layer incorporating doping impurity on substrate under the action of controlled partial pressure or gas feed rate followed by deposition of insulating layer and formation of sensing members in this semiconductor structure by means of selective etching. Silicon carbide semiconductor layer is evaporated and control action is effected while maintaining ratio of active to defective impurity centers in semiconductor layer at 1 : (2-20); sensing members produced have no potential barriers. EFFECT: enhanced sensitivity to physical actions; facilitated control of strain and heat sensing characteristics. 3 cl, 2 dwg, 3 tbl