CRYSTAL GROWING METHOD Russian patent published in 2002 - IPC

Abstract RU 2194100 C2

FIELD: growing crystals of spot group 32. SUBSTANCE: crystal are grown from solution at using seed crystal having at least two mutually inclined rod-like or plate-like portions embracing main zone of crystal growing and arranged eccentrically in grown monocrystal. Joining faces of two portions of seed crystal selected for growing crystal are mutually inclined by angle less than 180 deg. Method allows to grow high-quality structure large-size crystals of metal orthophosphate. EFFECT: enhanced quality of grown crystals. 11 cl, 9 dwg

Similar patents RU2194100C2

Title Year Author Number
PIEZOCRYSTAL 1994
  • Vol'Fgang Vall'Nefer
  • Peter Val'Ter Krempl'
RU2127484C1
PIEZOELECTRIC CRYSTAL ELEMENT 0
  • Gyunter Engel
  • Peter Valter Krempl
  • Khelmut List
  • Ufe Posh
  • Alfred Nich
SU1745144A3
METHOD OF PREPARING OF GALLIUM ORTHO-PHOSPHATE MONOCRYSTALS 1992
  • Zvereva О.V.
  • Мininzon Ju.М.
  • Dem'Janets L.N.
RU2019583C1
DEVICE FOR GROWING PROFILED CRYSTALS FROM SOLUTION 1998
  • Katsman V.I.
RU2133307C1
QUARTZ MONOCRYSTAL GROWING SEED (OPTIONS) 2003
  • Abdrafikov S.N.
  • Mikhalitsyn A.A.
  • Mikhalitsyna O.V.
RU2261294C2
METHOD OF PREPARING SYNTHETIC QUARTZ MONOCRYSTALS 1996
  • Dorogovin B.A.
  • Verin V.I.
  • Sopeleva E.G.
  • Mukhanova N.G.
  • Mareeva T.V.
RU2120502C1
METHOD OF GROWING OF FLAT CRYSTALS AND DEVICE FOR IMPLEMENTATION OF THIS METHOD 2008
  • Glebovskij Vadim Georgievich
RU2374339C1
SILICON SEMICONDUCTOR PLATE OF NEW TYPE AND PROCESS OF ITS MANUFACTURE 1994
  • Artur Ehndres
  • Dzhuliano Martinelli
RU2141702C1
METHOD OF GROWING OF SYNTHETIC QUARTZ CRYSTALS 2001
  • Gordienko L.A.
  • Dorogovin B.A.
  • Orlov O.M.
  • Poljanskij E.V.
  • Tsinober L.I.
  • Shvanskij P.P.
RU2186885C1
DEVICE FOR FAST GROWING OF PROFILED AND ORIENTED MONOSECTORIAL CRYSTALS KDR FROM SOLUTION 2000
  • Katsman V.I.
RU2176000C1

RU 2 194 100 C2

Authors

Krempl Piter

Vall'Nefer Vol'Fgang

Krispel Ferdinand

Tanner Gerbert

Dates

2002-12-10Published

2000-11-28Filed