METHOD OF GROWING OF FLAT CRYSTALS AND DEVICE FOR IMPLEMENTATION OF THIS METHOD Russian patent published in 2009 - IPC C22B9/22 C30B13/22 C30B13/32 

FIELD: metallurgy.

SUBSTANCE: invention elates to growing of flat crystal from refractory metal by electron-emitting zone melting and device for its implementation. Method includes location of seed crystal, installation on it of treated metal, application of potential drop between source of electrons and treated metal, establishment of working value of filament current for creation of even fusion zone and zonal remelting. Additionally in the device it is used flat seed crystal, it is welded to bottom carrier. Then treated refractory metal is welded to seed crystal and top carrier. Zonal remelting is implemented by means of impact by electronic beam on area of contact between flat seed crystal and treated metal with simultaneous movement of electrons sources bottom-up along the whole height and with formation of electronic beam by means of focusing of electronic beam of curved shape by means of four lamellate electrostatic screens. Two of them are installed perpendicularly to treated metal and are located from both sides of its side butts, and two parallel to frontal plane of treated metal up to receiving of flat crystal of specified crystallographic parametres.

EFFECT: receiving of flat crystals with specified orientation of grow axis, increasing of crystallographic quality and product yield increasing of flat crystals.

5 cl, 1 dwg