METHOD FOR QUALITY INSPECTION OF DIGITAL CMOS DEVICE CONNECTIONS Russian patent published in 2003 - IPC

FIELD: instrumentation engineering; tolerance check and in-service diagnosing of devices. SUBSTANCE: complementary metal-oxide-semiconductor devices are inspected for quality of their connections by checking variations of their mean input current relative to initial current under effect of electrical breakthrough on board of CMOS device under inspection; to this end the latter is disposed in electromagnet gap and harmonic-waveform signal is passed through electromagnet coil. Quality of device connections is recognized by changes in mean input current of CMOS device relative to initial current. EFFECT: facilitated procedure, reduced inspection time. 3 dwg