METHOD FOR DETERMINING THERMAL IMPEDANCE OF CMOS DIGITAL INTEGRATED MICROCIRCUITS Russian patent published in 2012 - IPC G01R31/28 

FIELD: physics.

SUBSTANCE: series of high-frequency switching pulses modulated according to a periodic law with frequency Ω and pulse ratio 2 are transmitted to inputs of one or more logic elements of the measured microcircuit. At the modulation frequency Ω, the amplitude of the first harmonic of current consumed by the measured microcircuit is detected and measured, as well as the amplitude of the first harmonic of temperature-sensitive parameter of the same logic element, whose state does not change and the phase shift φ(Ω) between the first harmonic of current consumed by the measured microcircuit, and the first harmonic of the temperature-sensitive parameter; the modulus of thermal impedance of the measured microcircuit is measured at frequency Ω using the formula: where K_T is the known negative temperature coefficient of the temperature-sensitive parameter, U_SUP is the supply voltage of the measured microcircuit.

EFFECT: high sensitivity and accuracy of measuring thermal impedance of CMOS digital integrated microcircuits.

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