FIELD: electronic engineering. SUBSTANCE: maskblank has coating and resist film on glass base. Coating material is composition of general formula MbEn, where M is chromium, iron; E is nitrogen, oxygen; m and n are atomic proportions of M and E; m > 3 and n <4. Used as resist film is photoresist or electron-sensitive resist. Base- to-coating-to-resist-film thickness ratio is (1-3)•103:1:(3-6). EFFECT: enhanced stability of lithographic characteristics due to mentioned preset thickness ratio. 2 cl, 1 tbl
Title | Year | Author | Number |
---|---|---|---|
METHOD FOR PRODUCING MASK TEMPLATES | 2005 |
|
RU2305918C2 |
METHOD FOR MAKING PHOTO-TEMPLATE BLANKS | 2005 |
|
RU2292679C2 |
METHOD FOR PRODUCING PHOTOMASK BLANK | 2004 |
|
RU2274925C1 |
METHOD OF PHOTO-TEMPLATE STOCKS PRODUCTION | 2006 |
|
RU2329565C1 |
METHOD FOR PRODUCING MASK TEMPLATES | 2005 |
|
RU2308179C1 |
METHOD FOR PRODUCING PHOTOMASK BLANKS | 2005 |
|
RU2307423C2 |
PROCESS OF PRODUCTION OF MASK WORKSTOCKS | 2001 |
|
RU2208920C1 |
METHOD FOR PRODUCING PHOTOMASK BLANKS | 2004 |
|
RU2319189C2 |
NON-METAL POSITIVE PHOTORESIST DEVELOPER | 2012 |
|
RU2484512C1 |
MASK AND METHOD OF MANUFACTURING THEREOF | 0 |
|
SU938338A1 |
Authors
Dates
2003-06-10—Published
2002-01-08—Filed