INTEGRATED CIRCUIT OF EXTREMELY HIGH FREQUENCY BAND Russian patent published in 2003 - IPC

Abstract RU 2206940 C1

FIELD: radio engineering. SUBSTANCE: proposed integrated circuit may be used for extremely high frequency receivers and transmitters or low-noise amplifiers. Single-end metallized microstrip line is made on substrate of λ0/100<h<λ0/30 thickness and face metallization in vicinity of waveguide window has specific configuration in the form of three series-connected microstrip line sections. Mathematical dependencies for calculating their length and width are given in description of invention. EFFECT: reduced input and output signal loss; enlarged operating frequency band. 1 cl, 3 dwg, 1 tbl

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RU 2 206 940 C1

Authors

Minnebaev V.M.

Dorofeev A.A.

Dates

2003-06-20Published

2001-11-06Filed