LEAD FRAME FOR SHF AND EHF SEMICONDUCTOR DEVICE Russian patent published in 2012 - IPC H01L23/48 

FIELD: physics.

SUBSTANCE: in the lead frame for a SHF and EHF semiconductor device, consisting of several leads outer and inner ends, the thickness of the lead frame is equal to 1-30 mcm and the length of outer leads which come out of the semiconductor device chip is equal to 0.1-1.5 mm, points for connecting inner and outer ends of the leads, as well as crossing the sections of the leads are smooth. At least two flat leads have a tapered section, wherein the width of its narrow part W_H coincides with the size of the inner end, and the width of the wide part W_k and length l satisfy the condition: ΔL/ΔC=1.15±0.75, where: ΔL is the relative change in spurious inductance of the flat lead L in percentages to its maximum possible change when W_k changes from 0.03 to 1 mm; ΔC is the relative change in spurious capacitance of the flat lead C in percentages to its maximum possible change when W_k changes from 0.03 to 1 mm, wherein L=0.05+[0.66-0.04(W_k/W_H)]1, C=[0.008+0.0002fW_k/W_H)]1, W_H is greater than or equal to 0.03 mm, and W_k varies from 0.04 to 1 mm.

EFFECT: improved electrical characteristics owing to optimisation of the configuration of leads and reduced power loss of the SHF signal.

2 cl, 5 dwg